PART |
Description |
Maker |
SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET -11A -200V 0.500 Ohm P-Channel Power MOSFET 11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC Motorola, Inc ON Semiconductor
|
S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
IRFD9220 FN2286 |
600 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET From old datasheet system 0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
|
Intersil Corporation
|
TYM-200-10 TYM-500-10 TYM-100K-10 TYM-100-10 TYM-2 |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 200 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 500 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 100000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 100 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 2000000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 500000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 1000000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 200000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 50000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 5000 ohm RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10 ohm
|
Vishay Intertechnology, Inc.
|
PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
RFP2N20L FN2875 |
2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET 2A 200V 3.500 Ohm Logic Level N-Channel Power MOSFET From old datasheet system 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
STP6NB50 STP6NB50FP |
3.4 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 5.8 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
|
STMICROELECTRONICS ST Microelectronics
|
SA80 SA51 SA110 SA100 SA43 SA22 SA45A SA150A SA48A |
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors 5.0 thru 170 volts 500 Watts Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 TOOL LONGNOSE ANTI-SHOCK SHEAR RES 21.5 OHM 1/16W .5% 0603 SMD
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation] MICROSEMI CORP-SCOTTSDALE
|
2SK769 |
10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PANASONIC CORP
|
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